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DCR1595SW
DCR1595SW
Phase Control Thyristor
Replaces October 2000 version, DS4248-5.0 DS4248-6.1 July 2001
FEATURES
s s
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt (max) (max) 4200V 3020A 53750A 1000V/s 400A/s
Double Side Cooling High Surge Capability
APPLICATIONS
s s s s s
High Power Drives High Voltage Power Supplies DC Motor Control Welding Battery Chargers
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V 4200 4100 4000 3900 3800 3700 Conditions
DCR1595SW42 DCR1595SW41 DCR1595SW40 DCR1595SW39 DCR1595SW38 DCR1595SW37
Tvj = 0 to 125C, IDRM = IRRM = 400mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: W (See Package Details for further information)
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1595SW38 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
Fig. 1 Package outline
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DCR1595SW
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3020 4745 4370 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1975 3105 2650 A A A
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2380 3735 3360 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1530 2405 1996 A A A
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DCR1595SW
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Test Conditions 10ms half sine, Tcase = 125C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 125C VR = 0 Max. 43.0 9.25 x 106 53.75 14.4 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 70.0kN Double side Min. -55 63.0 Max. 0.008 0.016 0.016 0.001 0.002 135 125 125 77.0 Units CW CW CW CW CW C C C kN
(with mounting compound) Single side Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force
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DCR1595SW
SURGE RATINGS
Symbol IRRM/IRRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125C To 67% VDRM, Tj = 125C, gate open From 67% VDRM to 2x IT(AV) Repetitive 50Hz Gate source 30V, 10, Non-repetitive tr < 0.5s, Tj = 125C VT(TO) rT tgd Threshold voltage On-state slope resistance Delay time At Tvj = 125C At Tvj = 125C VD = 67% VDRM, gate source 30V, 15 tr = 0.5s, Tj = 25C tq Turn-off time IT = 5000A, tp = 3.5ms, Tj =125C, VR = 900V, dIRR/dt = 4A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear IL IH Latching current Holding current Tj = 25C, VD = 5V Tj = 25C, RG-K = , ITM = 500A, IT = 5A 220 50 1000 250 mA mA 550 0.5 1.03 0.19 2 1000 s V m s Min. Max. 400 1000 200 400 Units mA V/s A/s A/s
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DCR1595SW
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 8 and 9 Max. 4 400 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
CURVES
10000 9000
Instantaneous on-state current, IT - (A)
Tj = 125C
4000 Tj = 125C 3500
Instantaneous on-state current, IT - (A)
8000 7000 6000 5000 4000 3000 2000 1000 0 0.5
3000 2500 2000 1500 1000 500 0 0.6
1 1.5 2 2.5 Instantaneous on-state voltage, VT - (V)
3
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics A = 0.02866651 B = 0.1590393 C = 1.947584x10-4 D = -5.23298x10-3 these values are valid for Tj = 125C for IT 500A to 10000A 5/10 Where
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
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DCR1595SW
6000
2000 1800
5000
1600 1400
4000
Power loss - (W)
Power loss - (W)
1200 1000 800 600 400 200 0 0
3000 Conduction angle 180 120 90 60 30 15 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) 3000
2000
Conduction angle 180 120 90 60 30 15 200 400 600 800 1000 Mean on-state current, IT(AV) - (A) 1200 1400
1000
0
Fig.4 Sine wave power dissipation
Fig.5 Sine wave power dissipation
6000
2000 1800
5000
1600 1400
4000
Power loss - (W)
Power loss - (W)
1200 1000 800 600 400 200 0 Conduction angle D.C. 180 120 90 60 30 0 200 400 600 800 1000 1200 1400 Mean on-state current, IT(AV) - (A) 1600
3000 Conduction angle D.C. 180 120 1000 90 60 30 0 0 500 1000 1500 2000 2500 3000 Mean on-state current, IT(AV) - (A) 3500 4000
2000
Fig.6 Square wave power dissipation
Fig.7 Square wave power dissipation
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DCR1595SW
10 Table gives pulse power PGM in Watts 9 8 Pulse Width s 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 Tj = -40C 5 Tj = 25C 4 3 Tj = 125C 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 1 Preferred gate drive area Upper limit Lower limit
Gate trigger voltage, VGT - (V)
7 6
Fig.8 Gate characteristics
30 Upper limit Lower limit 5W 10W 20W 50W 100W 150W
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) 7 8 9 10
Fig.9 Gate characteristics
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DCR1595SW
100
10.0 9.0
10000
Peak half sinewave on-state current - (kA)
Conditions: VR = 50V IT = 3000A Tj = 125C
Total stored charge QS - (C)
80
8.0
I2t value for fusing - (A2s x 106)
Max Min
7.0 60 I2t 40 6.0 5.0 4.0 3.0 20 2.0 1.0
1000 IT QS
dI/dt IRR 100 0.1 1.0 Rate of decay of on-state current dI/dt - (A/s) 10
0 1 ms 10 1 5 10 Cycles at 50Hz Duration 0 50
Fig.10 Stored charge
Fig.11 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C)
0.1
Anode side cooled 0.01
Thermal impedance - C/W
Double side cooled
0.001
0.0001
0.00001 0.001
Effective thermal resistance Junction to case - C/W Double sided Single sided d.c. 0.0080 0.0160 half wave 0.0088 0.0168 3 phase 120 0.0090 0.0170 6 phase 60 0.0100 0.0180
Conduction
0.01
0.1 Time - (s)
1.0
10
Fig.12 Maximum (limit) transient thermal impedance junction to case (C/W)
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DCR1595SW
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6x2.0 deep (in both electrodes)
Cathode
tab
Cathode O120 max O84.6 nom
Gate O84.6 nom O120 max
Anode
Nominal weight: 2600g Clamping force: 70kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: W
27.7 26.0
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DCR1595SW
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4248-6 Issue No. 6.1 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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